Renewable Energy Sources

Photovoltaics

Whilst many achievements have been made over the last decades, costs of PV cells are still the main obstacle for increased utilization of electric power provided by this clean and renewable technology. In order to become competitive, new improved solar cell concepts and cost-effective manufacturing solutions have to be developed to facilitate further growth of the sector.

Having accumulated the expertise of the leading Lithuanian PV researchers with a solid background in FP projects Protech is further developing the PV sector in its PV and Solar Cells Centre the main activities of which are:

• RTD in Self-formation of artificial systems
• Self-formation applications in microelectronics, nanotechnologies and renewable energy technologies
• Instruments (software) for analysis and synthesis of technological methods for new energy technologies
• Solar cells manufacturing technologies

Protech is a partner-administrator of PV National Technology Platform.

Protech also joined the PV Technology Claster established at the beginning of 2008 in Vilnius. The Claster is aiming to consolidate efforts of 19 Lithuanian companies operating in PV technologies sector to create a systematic premises for sustainability and competitivenes of national PV sector.

Other renewable energy sources

Protech's competence in development of software tools for technological modeling, simulation techniques application to PV technologies, and excellent expertise in metrology and sensors has led to various promising activities and development of different applications in renewable energy technologies. Currently Protech is carrying the research related to modeling, based on computational fluid dynamics, 3-D finite element and simulation techniques for RES.

Projects

- NANO-SE
3-D Nano - Structured Si Object for Very High Efficiency Solar Cells, Based on Self-Formation Principles
Funded by Lithuanian State Science and Studies Foundation.

Semiconductor nanotechnology today is a very well studied subject, and demonstration of possible applications and concepts are abundant. However, well-controlled, mass-production on the nanoscale is still a great challenge, and the lack of nanofabrication methods that provide the combination of required fabrication precision and high throughput, limits the large-scale use of nanodevices.

This project aims at resolving some of the issues related to Si nanostructure fabrication. The proposed approach in based on self-formation technology which was created in micro scale for solar cell fabrication. Project deals with development of nanofabrication processes, the use of size-reduction for reaching true nanoscale dimensions (20 nm or below), and finally the optical and electrical characterization of Si nanopillars with p-n junction, to understand the physics for development of the more successful structures and their usefulness for photovoltaic (P devices).

The possibility to form the nanopores with supposed dimension of porous aluminum onto silica surface will be investigated in this project. In order to develop optimal route for nanopillars formation, the sequences of formation processes will be investigated. Also, the means for testing of nanopillars dimensions will be examined and research on properties of nanopillars will be performed.

The expected results are the method of nanopillars formation, which enables to form nanopillars with dimension 20 nm and below, for application in high efficiency PV devices.

- SELFLEX
Demonstration of SELF-formation based FLEXible solar cells manufacturing technology
EU FP6 project.
http://selflex.protechnology.lt

The overall objective of the project is to demonstrate at industrial scale cost-effective crystalline Si PV cells manufacturing technology based on highly innovative manufacturing concept - self-formation. The fundamental principle of self-formation, having much in common with growth processes found in living nature, is generation of structural growth processes through interaction of chaotic and structured media self-formation manufacturing concept is based on the selected groups of planar bottom-up processes (so called self-formation processes) able to specifically form the structure of object. Generation of self-formation based manufacturing protocols enables optimization of technology of cost-effective means.

Key studies

• Feasibility Study for the Production of Solar Grade Silicon in Lithuania (Contractor - Ministry of Economy of the Republic of Lithuania)
• Photovoltaic industry and research and technology development: demand and perspectives (financed by the Ministry of Economy of the Republic of Lithuania)
• A Strategic Research Agenda for Photovoltaic Technology (financed by the Ministry of Economy of the Republic of Lithuania)
• Strategy (vision) for the development of Lithuanian Photovoltaic Technology Platform (financed by the Ministry of Economy of the Republic of Lithuania)
• Production Technologies of Solar Grade Silicon in Europe and CIS Countries (Contractor - private enterprise AB VITI)
• The Feasibility Study of the Lithuanian Hydrogen and Fuel Cell Technology Platform (financed by the Ministry of Economy of the Republic of Lithuania)
• The Strategic Research Agenda of the Lithuanian Hydrogen and Fuel Cell Technology Platform (financed by the Ministry of Economy of the Republic of Lithuania)
• The Development Strategy (Vision) of the Lithuanian Hydrogen and Fuel Cell Technology Platform (financed by the Ministry of Economy of the Republic of Lithuania)

Publications and patents

• J. Janusonis, A. Galdikas, J. Ulbikas. Optimisation of the metal grid on the selective n/n+ and single step n+ emitter structures with the base influence. An accepted abstract. The paper will be presented at the 23rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 1st to 5th September 2008, Valencia, Spain.
• V. Juzumas, A. Galdikas, A.Melninkaitis, G. Slekys. Laser ablation of passivating barrier layer coated silicon using high repetition rate femtosecond pulses for selective emitter formation. An accepted abstract. The paper will be presented at the 23rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 1st to 5th September 2008, Valencia, Spain.
• L. Meslinaite, J. Janusonis, A. Galdikas, J. Ulbikas. Investigation of the laser diffused from spin-on glass localized point contacts. An abstract submitted to the An accepted abstract. The paper will be presented at the 23rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 1st to 5th September 2008, Valencia, Spain.
• V. Janusoniene, J. Janusonis, V.Juzumas, L. Meslinaite, J. Ulbikas, A.Melninkaitis, M. Izzi, M. Tucci, L. Pirocci, D. Janusonis , A. Galdikas. Solar Cell with Single step selective emitter and self-aligned metal grid . An accepted abstract. The paper will be presented at the 23rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 1st to 5th September 2008, Valencia, Spain.
• V.Juzumas, J. Janusonis, M. Izzi, V. Bukauskas, V. Janusoniene. Phosphorus diffusion through spun-on dielectric layers. An accepted abstract. The paper will be presented at the 23rd European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 1st to 5th September 2008, Valencia, Spain.
• V. Juzumas, A. Melninkaitis, T. Balciunas, V. Sirutkaitis, J. Janusonis, V. Janusoniene, G. Slekys. Groove ablation in crystalline silicon and SiO2 passivation layer removal using femtosecond Ytterbium DPSS system. Workshop: Laser Technology in Photovoltaics (Germany 2007).
• J. Janusonis, T. Brastavicius, L. Leonas, J. Ulbikas. Modelling of a new single side contact bifacial solar cell. Proceedings of World Renewable Energy Congress IX, 2006, Florence, Italy.
• V. Janusoniene, J. Janusonis, A. Siusys, V. Juzumas, A.Melninkaitis. Single step selective emitter and self-aligned metal grid formation. 22nd European Photovoltaic Solar Energy Conference, Milano, Italy, 3- 7 September, 2007.
• V. Janusoniene, L. Leonas, J. Ulbikas, T. Brastavicius. Self-forming Nickel Contacts to solar cell with vertical walls. 21st European Photovoltaic Solar Energy Conference, Dresden, Germany, 4-8 September, 2006.
• V. Janusoniene, L. Leonas, T. Brastavicius. N +n Type Emitter Self-formation in Deep Grooves for Vertical Walls Solar Cell. Proceedings of EuroSun2006, Glasgow, United Kingdom, 27-30 July 2006.
• J. Ulbikas, D. Ulbikiene, V. Janusoniene, K. Pozela. Spatial Solar Cells Performance and Technology Optimization. EuroSun2004 Proceedings, Freiburg 2004, vol.3, 367-372.
• V. Janusoniene, E. Leoniene, L. Leonas. Technological Graph of Self-forming Solar Cell. Solid State Phenomena. Vols. 97-98, 2004, p. 103-108.
• S. Janusonis, V. Janusoniene. Self-formation of the artificial planar systems. Theory and application. Solid State phenomena. Vol. 97-98. Switzeland, 2004, p. 259.
• L. Leonas, S. Janusonis. Simulation of Self-formation in Solar cell Technology. Proceedings of the 6-th International Conference "Self-formation. Theory and Applications"- Solid State Phenomena, V. 97-98, Zurich, 2004, p.103-114.
• J. Janusonis. Modelling of a high efficiency solar cells. XII pasaulio lietuviu mokslo ir kurybos simpoziumas, 2003.
• S. Janusonis, V. Janusoniene, J. Janusonis. Self-formation in solar cell technology. Proceedings of World Renewable Energy Congress VII, Cologne, 29 June - 5 July, 2002.
• Vida Janusoniene. Is it useful to transform solar light to electricity in Lithuania ? - "Mokslas ir gyvenimas", 2001, Nr. 6, p. 14-17 (in Lithuanian).
• Vida Janusoniene. Solar cell technologies in Lithuania. Abstracts of World lithuanians XI science and art symposium. Vilnius, June 21-26 2000, p. 177.
• P. Balciunas, V. Janusoniene, S. Janusonis. How to transform solar light to electricity.- Vilnius, 1999, p.69.
• Stepas Janusonis, Vida Janusoniene. Self-formation principles in Solar cell technology.- Proceedings of the International Conference "Renewable energy in Agriculture". Raudondvaris, 16-17 September 1999, p. 73-78.
• Vida Janusoniene, Stepas Janusonis. Implementation of self-formation principles in solar cell technology. - Proceedings of I-st national conference "Renewable energy sources in Lithuania", Vilnius, 1999, p. 28-32 (in lithuanian).
• Stepas Janusonis, Vida Janusoniene. Fotoelektra - neribota elektros energija is saules.- "Mokslas ir technika", 1998, Nr.6, p. 21-24. (in lithuanian)
• Vida Janusoniene, Stepas Janusonis. Monocrystaline Si Solar Cell technology SE-14-94. - Joint-stock venture "Saules energija".
• Vida Janusoniene, Stepas Janusonis. Monocrystaline Si Solar Cell technology SE-13-93. - Joint-stock venture "Saules energija".
• Patent USSR N0 1581118. Method of manufacturing of microwave Shotkey barrier Field-effect transistors/ Pozela J. K., Janusonene V.-K. J., Janusonis S.S., Zilinskas E.V., Narkus S.J., Seikiene K.J., Juzikene V.J., Jurgelionene S. E., Vitkus A. M.1990. (in Russian).
• Patent USSR N0 1480669. Method of submicrometer windovs opening/ Janusonis S.S., Narkus J., Seikiene K.J., Juzikiene V.J., Janusoniene V.K.J., Zilinskas E.V., 1989. (in Russian).
• Poþela J. K., Janusoniene V.-K. J., Janusonis S.S., Zilinskas E.V., Narkus S.J., Seikiene K.J., Juzikiene V.J., Jurgelionene S. E., Vitkus A. M. Manufacturing method of Field-effect transistors/ with submicron length Shotkey barrier - Avtorskoje svideteljstvo SSSR N0 , 22.03.90, priority from 88.07.27.
• Patent USSR N0 1281090. Method of windovs opening in passivated layer/ Baniulis V.K., Janusoniene V.K.J., Janusonis S.S. 1985., Int. Cl H01L 21/31 (in Russian).
• S.Janusonis, V.Janusoniene, S.Narkus, E.Zilinskas. Self-formation for high speed MESFET fabrication. - 3rd Conference on Physics and Technology of GaAs and other III-IV Semiconductors. Abstracts. Tatranska Lomnica, CSSR, 1988, p. 46.
• Patent USSR N0 1266397. Method of manufacturing Shotkey barrier Field-effect transistors/ Janusoniene V.K., Janusonis S.S., Seikiene K.I., Petrauskas G.B., Zilinskas E.V., Verseckas Z.P., Juzikiene V.J.1985, Int.Cl. H01L. (in Russian).
• Patent USSR N0 1284416. . Method of manufacturing Shotkey barrier Field-effect transistors (its versions)/ Janusoniene V.K.J, Janusonis S.S., Seikiene K.I., Petrov E.P., Petrauskas G.B., Zilinskas E.V., Verseckas Z.P., Juzikiene V.J. H01. (in Russian).
• Patent USSR N0 1292621. Janusonis S.S, Janusoniene V.K.J., Verseckas, Z.P., Zilinskas E.B.., Petrov E.P., Seikiene K.I., Juzikiene V.J. /Method of manufacturing of field-effect Shotkey transistor.- 1985, Int.Cl. H01 L 21/18 (in Russian).
• Patent USSR N0 1176790 Method of manufacturing of injection logic integrated circuits/ Janusonis S.S, Janusoniene V.K.J., Baniulis V.B., Mirkes V.M. (in Russian).
• S. Janusonis, V. Janusoniene. Self-formation in Solid-State Technology (a monograph), - Vilnius, 1985, p.192.
• Patent USSR N0 1266397. Method of manufacturing Shotkey barrier Field-effect transistors/ Janusoniene V.K., Janusonis S.S., Seikiene K.I., Petrauskas G.B., Zilinskas E.V., Verseckas Z.P., Juzikiene V.J.1985, Int.Cl. H01L. (in Russian).
• Patent USSR N0 1176790 Method of manufacturing of injection logic integrated circuits/ Janusonis S.S, Janusoniene V.K.J., Baniulis V.B., Mirkes V.M. (in Russian).
• Patent USSR No1102434.Method of manufacturing of integrated circuits/ Bruzas J.A., Zanevicius D.J., Seikiene K.J., Janusoniene V.K.J., Janusonis S.S..- 1978, Int.Cl. H01 L21/473 (in Russian).
• Patent USSR N0 1108967. Method of manufacturing of injection logic integrated circuits /Janusonis S.S, Janusoniene V.K.J., Zanevicius D.J. (in Russian).
• Patent USSR N0 1111637. Method of manufacturing of injection logic integrated circuits/ Janusoniene V.K.J., Janusonis S.S, Zanevicius D.J., 1983, Int.Cl H10 L 21/82 (in Russian).
• Patent USSR N0 1135387. Method of manufacturing of injection logical integrated circuits/ Baniulis V.K., Janusonis S.S, Janusoniene V.K.J. (in Russian).
• Patent USSR N0 793212. Method of manufacturing of bipolar integrated transistor/ Janusonis S.S., Cicelis V.V., Cernov S.A., Kublickaite N.V., Serkuviene V.K.J*. , 1980, Int. Cl. H01L 21/31 (in Russian).
• Patent USSR N0 797471. Method of manufacturing of integral transistors/ Janusonis S.S., Beliauskas B.V.B., Navickas R.B., Kucinskas J.D., Laukis E.B., Serkuviene V.K.J*., Simonyte A.A, 1980, Int.Cl.H01L 21/12 (in Russian).
• Patent USSR N0 733483. Method of manufacturing of transistor structures/ Beliauskas B.V.B.,Janusonis S.S., Baniulis V.K., Serkuviene V.K.J*., Kucinskas J.D., Seikiene K.J., Kiselev A.G, 1980, Int.Cl. H01L 21/12.(in Russian).
• Klimasauskas K.J., Serkuviene V.K.J*., Janusonis S.S. Manufacturing of IC by Self-formation. - "Elektronnaja promyshlennostj", 1980, vyp. 1(85), s. 10-12.
• Patent CS No180949. Zpusob vyroby polovodicoveho prvku / S.S.Janusonis, B.-V.B.Beljauskas, V.-K.J.Serkuvene*, V.K.Banjulis.- 1979, Int.Cl. H01 L21/00 (in Chech).
• Patent H No172486. Eljaras felvezeto elemek eloallitasara / S.S.Janushonis, B.-V.B.Belyauskas, V.-K.J.Sherkuvene*, V.K.Banjulis.- 1979, Int.Cl. H01 L21/385 (in Hungarian).
• Patent USSR N0 713411. Method of windows opening in masking layer/ Janusonis S.S., Serkuviene V.K.J*., 1979, Int. Cl. H01L 21/308 (in Russian).
• Patent USSR N0 669990. Method of manufacturing of transistor structures./Beliauskas B.V.B., Serkuviene V.K.J*., Janusonis S.S. ,1979. (in Russian).
• Patent USSR N0 695403. Method of manufacturing of electron devices. Janusonis S.S., Klimasauskas K.-J.J., Serkuviene V.K.J*., Baniulis V.K., Beliauskas B.V.B., Kucinskas J.D., Seikiene K.J. , 1978, (in Russian).
• Patent F No 75 35846. Procede de la fabrication de dispositifs a semi-conducteurs / S.S.Yanushonis, B.-V.B.Belyauskas, V.-K.J.Sherkuvene*, V.K.Banjulis.- 1979, Int,Cl. H01 L21/316.
• Deutche Bundesrepublik Patent N0 2552641. Verfahren zur Herstellung von Halbleiterbauelementen / S.S.Januschonis, B.-V.B.Beljauskas, V.-K.J.Scherkuviene* geb. Krivitskaite, V.K.Banjulis.- 1979, Int. Cl. H 01 L 21/31.
• Patent USSR N0 701410. Method of manufacturing of transistor structures/ Janusonis S.S., Serkuviene V.K.J*., Baniulis V.K., Beliauskas B.V.B., Zanevicius D.J. 1979, Int.Cl. H01L 21/31 (in Russian).
• Patent USSR N0 688036. Method of manufacturing of bipolar transistors/ Janusonis S.S., Klimasauskas k.-J.J., Abraitis V.B.B., Serkuviene V.K.J*., Baniulis V.K., Beliauskas B.V.B. Int.Cl. H01/21/31(in Russian).
• Patent USSR No 653647. Method of manufacturing of source for transistor structure base doping / S.S.Janusonis, V.-K.J.Sherkuviene*,1979, Int.Cl. H01 L21/02 (in Russian).
• Serkuviene V.K.J*., Janusonis S.S. Change of surface profil under etching. - "Elektronnaja technika", serija 3, mikroelektronika, 1976, vyp. 3(63), s. 64-71.
• Patent USSR No526221. Method for manufacturing of transistor structures / V.K.Baniulis, S.S.Janusonis, V.-K.J.Serkuviene*.-1978, Int.Cl. H01 L21/00 (in Russian).
• Patent USSR No521802. Method of selective formation base dopant source for manufacturing of transistor structures / V.-K.J.Serkuvene*, S.S.Janusonis.- 1978, Int.Cl. H01 L21/473 in Russian).
• Janushonis S.S., Beljauskas B.-W.B., Sherkuwene V.-K.J*., Banjulis V.K. Verfahren zur Herstellung vo Halbleiterbauelementen. - Deutche Demokratische Republik, N0 121429, H01L, 21/308, 1974.
• Janushonis S.S., Beljauskas B.-V.B., Sherkuviene V.-K.J*., Banjulis V.K. Verfahren zur Herstellung von Halbleiterbau elementen. - Bundesrepublik Deutshland, offenlegungsschrift N0 2552641, H01L 21/70, DT 2552264 AI, 1976.
• Janusonis S.S., Baniulis V.K., Serkuviene V.K.J*. Orthogonal method of manufacturing submicron transistor structures. - "Elektronnaja promyshlennostj", t. 2/6/1975, s.13-16.
• Kucinskas J.D., Serkuviene V.K.J*., Janusonis S.S. One-Dimmention model of spatial lithography. - Specialjnaja elektronika", serija 3, mikroelektronika, 1975, vyp. 1(26), s. 62-67.
• Patent USSR N0 475092. Transitor structure/ Janusonis S.S., Baniulis V.K., Serkuviene V.K.J*, 1974 (in Russian).
• Baniulis V.K., Beliauskas B.V.B., Gribov B.G., Zinovjev K.V., Isharina S.F., Serkuviene V.K.J.*, Janusonis S.S. Protection features of silicoaluminat glass. - "Elektronnaja promyshlennostj", 1975, 2T(6), s.70.
• Patent USSR N0 504434. Non-homogeneous impurity glass for spatial lithography/ Janusonis S.S., Beliauskas B.V.B., Serkuviene V.K.J*, 1975, Int.Cl. H01L 7/46 (in Russian).

* - Janusoniene - former Sherkuviene